5SHY3545L0009 ABB 可控硅整流元件

如果IGBT栅极与发射极之间的电压,即驱动电压过低,则IGBT不能稳定正常地工作,如果过高超过栅极-发射极之间的耐压则IGBT可能永久性损坏;同样,如果加在IGBT集电极与发射极允许的电压超过集电极-发射极之间的耐压,流过IGBT集电极-发射极的电流超过集电极-发射极允许的最大电流,IGBT的结温超过其结温的允许值,IGBT都可能会永久性损坏。

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Description

可控硅全称“可控硅整流元件”(Silicon Controlled Rectifier),简写为SCR,别名晶体闸流管(Thyristor),是一种具有三个PN结、四层结构的大功率半导体器件。可控硅体积小、结构简单、功能强,可起到变频、整流、逆变、无触点开关等多种作用,因此现已被应用于各种电子产品中,如调光灯、摄像机、无线电遥控、组合音响等。可控硅完全导通后,流过A、K两极的电流即为通态电流IT(On-State Current),实际应用时,VAK通常是交流电压(如220VAC),因此常将此参数标记为通态平均电流IT(RMS),指可控硅元件可以连续通过的工频正弦半波电流(在一个周期内)的平均值,而此时流过G、K两极的电流即为门极电流IG(Gate Current),这个门极控制电流不应超过门极大峰值电流IGM(Forward Peak Gate Voltage)当VAK是交流电源的负半周时,可控硅因为A、K两极加反向电压而阻断,此时允许施加的大电压称为反向重复峰值电压VRRM(Peak Repetitive Reverse Blocking Voltage),由于可控硅阻断时的电阻不是无穷大,此时的电流称之为反向重复峰值电流IRRM(Peak Repetitive Reverse Blocking Current)。这两个值与之前介绍的IDRM、VDRM是一样的,只不过IDRM、VDRM是在控制G极断开、可控硅阻断状态下测量的,而IRRM、VRRM是在可控硅A、K极接反向电压下测量的。如果在可控硅阳极A与阴极K间加上反向电压时,开始可控硅处于反向阻断状态,只有很小的反向漏电流流过。当反向电压增大到某一数值时,反向漏电流急剧增大,这时,所对应的电压称为反向不重复峰值电压VRSM(Peak Non-Repetitive Surge Voltage)

5SHY3545L0009

The full name of thyristor is “Silicon Controlled Rectifier”, abbreviated as SCR, also known as Thyristor. It is a high-power semiconductor device with three PN junctions and four layer structure. Silicon controlled rectifier has small size, simple structure, and strong functions, which can play various roles such as frequency conversion, rectification, inverter, contactless switch, etc. Therefore, it has been applied in various electronic products, such as dimmers, cameras, radio remote control, combination audio, etc. After the thyristor is fully conductive, the current flowing through the A and K poles is called the on state current IT (On State Current). In practical applications, VAK is usually an AC voltage (such as 220VAC), so this parameter is often marked as the on state average current IT (RMS), which refers to the average power frequency sine half wave current (within a cycle) that the thyristor component can continuously pass through. At this time, the current flowing through the G and K poles is called the gate current IG (Gate Current), The gate control current should not exceed the maximum gate peak current IGM (Forward Peak Gate Voltage). When VAK is the negative half cycle of the AC power supply, the thyristor is blocked due to the reverse voltage applied to the A and K poles. At this time, the allowed large voltage is called the Peak Repetitive Reverse Blocking Voltage VRRM (Peak Repetitive Reverse Blocking Voltage). Since the resistance when the thyristor is blocked is not infinite, The current at this time is called the Peak Repetitive Reverse Blocking Current (IRRM). These two values are the same as the previously introduced IDRM and VDRM, except that IDRM and VDRM are measured under the control of G pole disconnection and thyristor blocking state, while IRRM and VRRM are measured under the reverse voltage of thyristor A and K pole connection. If a reverse voltage is applied between the anode A and cathode K of the thyristor, the thyristor begins to be in a reverse blocking state, with only a small reverse leakage current flowing through. When the reverse voltage increases to a certain value, the reverse leakage current sharply increases, and the corresponding voltage is called the Peak Non Repetitive Surge Voltage (VRSM).

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  • 购买咨询热线/Phone:18859254943
  • 邮箱/Email:sales@ygdcs.com
  • 地址:成都高新区天益街北巷52号附14号2层