5SHY3545L0010 3BHB013088R0001 ABB 单向可控硅

Description

单向可控硅是一种可控整流电子元件，能在外部控制信号作用下由关断变为导通，但一旦导通，外部信号就无法使其关断，只能靠去除负载或降低其两端电压使其关断。单向可控硅是由三个PN结PNPN组成的四层三端半导体器件，与具有一个PN结的二极管相比，单向可控硅正向导通受控制极电流控制；与具有两个PN结的三极管相比，差别在于可控硅对控制极电流没有放大作用。双向可控硅具有两个方向轮流导通、关断的特性。双向可控硅实质上是两个反并联的单向可控硅，是由NPNPN五层半导体形成四个PN结构成、有三个电极的半导体器件。由于主电极的构造是对称的（都从N层引出），所以它的电极不像单向可控硅那样分别叫阳极和阴极，而是把与控制极相近的叫做第一电极A1，另一个叫做第二电极A2。双向可控硅的主要缺点是承受电压上升率的能力较低。这是因为双向可控硅在一个方向导通结束时，硅片在各层中的载流子还没有回到截止状态的位置，必须采取相应的保护措施。双向可控硅元件主要用于交流控制电路，如温度控制、灯光控制、防爆交流开关以及直流电机调速和换向等电路。可控硅在维持电流以上一直处于开通状态，关断电流高，控制困难，关断速度较慢。逆变环节中，在LCI（负载换相逆变器）中SCR具有优异表现，可做到超大功率，电压高、电流也大。二极管（Diode，不可控整流器件）和SCR（半可控）整流均不需要PMW即可满足两象限变频器工作，PWM需要用IGBT（全控）等器件。

5SHY3545L0010 3BHB013088R0001 3BHE009681R0101 GVC750BE101

Unidirectional thyristor is a controllable rectifier electronic component that can change from off to on under the action of external control signals. However, once on, the external signal cannot turn it off and can only be turned off by removing the load or reducing the voltage at both ends. Unidirectional thyristor is a four layer three terminal semiconductor device composed of three PN junctions PNPN. Compared with diodes with one PN junction, the forward conduction of unidirectional thyristor is controlled by the control pole current; Compared with a transistor with two PN junctions, the difference is that the thyristor has no amplification effect on the control electrode current. Bidirectional thyristor has the characteristic of conducting and turning off alternately in two directions. Bidirectional thyristors are essentially two anti parallel unidirectional thyristors, which are semiconductor devices composed of four PN structures formed by NPNPN five layer semiconductors and have three electrodes. Due to the symmetrical structure of the main electrode (all led out from the N layer), its electrodes are not referred to as anodes and cathodes respectively like unidirectional thyristors. Instead, the electrode that is similar to the control electrode is called the first electrode A1, and the other is called the second electrode A2. The main drawback of bidirectional thyristor is its low ability to withstand voltage rise rate. This is because when the bidirectional thyristor completes conduction in one direction, the charge carriers in each layer of the silicon wafer have not yet returned to the cut-off state, and corresponding protective measures must be taken. Bidirectional thyristor components are mainly used in AC control circuits, such as temperature control, lighting control, explosion-proof AC switches, and DC motor speed regulation and commutation circuits. The thyristor is always in an open state above the maintenance current, with high turning off current, difficult control, and slow turning off speed. In the inverter stage, SCR has excellent performance in LCI (Load Commutated Inverter), which can achieve ultra high power, high voltage, and high current. Diode (uncontrollable rectifier) and SCR (semi controllable) rectifiers do not require PMW to meet the operation of two quadrant inverters, while PWM requires devices such as IGBT (fully controlled).

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