5SHY3545L0014 ABB IGCT模块

Description

IGCT使变流装置在功率、可靠性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展，给电力电子成套装置带来了新的飞跃。IGCT是将GTO芯片与反并联二极管和栅极驱动电路集成在一起，再与其栅极驱动器在外围以低电感方式连接，结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点，在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。IGCT具有电流大、电压高、开关频率高、可靠性高、结构紧凑、损耗低等特点，而且造成本低，成品率高，有很好的应用前景。采用晶闸管技术的GTO是常用的大功率开关器件，它相对于采用晶体管技术的IGBT在截止电压上有更高的性能，但广泛应用的标准GTO驱动技术造成不均匀的开通和关断过程，需要高成本的dv/dt和di/dt吸收电路和较大功率的栅极驱动单元，因而造成可靠性下降，价格较高，也不利于串联。但是，在大功率MCT技术尚未成熟以前，IGCT已经成为高压大功率低频交流器的优选方案。

5SHY3545L0014

IGCT has made significant progress in power, reliability, switching speed, efficiency, cost, weight, and volume of converter devices, bringing a new leap to power electronic complete sets of devices. IGCT integrates GTO chips with anti parallel diodes and gate drive circuits, and then connects them with their gate drivers in a low inductance manner on the periphery. It combines the stable turn-off ability of transistors and the advantages of low on state losses of thyristors, exerting the performance of thyristors during the conduction phase, and presenting transistor characteristics during the turn-off phase. IGCT has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure, low losses, and low manufacturing cost, high yield, and has good application prospects. GTO using thyristor technology is a commonly used high-power switching device, which has higher performance in cutoff voltage compared to IGBT using transistor technology. However, the widely used standard GTO driving technology causes uneven turn-on and turn-off processes, requiring high cost dv/dt and di/dt absorption circuits and high-power gate driving units, resulting in reduced reliability, high price, and unfavorable series connection. However, before the high-power MCT technology was mature, IGCT had become the preferred solution for high-voltage high-power low-frequency AC converters.

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