5SHY3545L0016 3BHB020720R0002 ABB 绝缘门极双极性晶体管

描述

IGCT集IGBT（绝缘门极双极性晶体管）的高速开关特性和GTO（门极关断晶闸管）的高阻断电压和低导通损耗特性于一体，一般触发信号通过光纤传输到IGCT单元。在ACS6000的有缘整流单元的相模块里，每相模块由IGCT和续流二极管、钳位电容、阻尼电阻组成，由独立的门极供电单元GUSP为其提供能源。

IGBT模块只是将功率器件部分封装为模块，IGBT模块产品一般可以是单管、双管（半桥）或6管（全桥），也有三电平12只管封装为一个模块。由于已经封装为模块，是电绝缘的，安装工艺简单；IGCT不具备这种优势，使系统的设计、安装和维护复杂，绝缘与散热之间的矛盾，使系统问题较多。

IGBT小功率驱动可以做在一起，大功率需要单独的驱动板。dsp是控制核心，还有外部io，内部信号采集，处理，驱动信号缓冲，驱动信号隔离，放大，才能到IGBT的GE极。光纤隔离传输驱动信号。

IGBT通断频率要高，但dv/dt就是通断速度要低，有一定矛盾，只有速度足够快，频率才能足够高。加吸收电路或者IGBT采取软关断，吸收电路是把有可能产生的10kv/us吸收，软关断是指降低开关的关断速度，人为造成关断拖尾，好处是减小dv/dt，坏处是加大了IGBT损耗，所以要细致调整关断时间。IGBT驱动电路关断IGBT时在GE处施加负电压（开通施加正电压），在微型电容处串微型电阻，这样GE电压下降就会变慢， 从而减小dv/dt。

5SHY3545L0016

IGCT integrates the high-speed switching characteristics of IGBT (Insulated Gate Bipolar Transistor) and the high blocking voltage and low conduction loss characteristics of GTO (Gate Off Thyristor). Generally, the trigger signal is transmitted to the IGCT unit through optical fiber. In the phase module of the edge rectifier unit of ACS6000, each phase module is composed of IGCT, freewheeling diode, clamp capacitor, and damping resistor, and is powered by an independent gate power supply unit GUSP.
IGBT modules only encapsulate power devices as modules. IGBT module products can generally be single transistor, double transistor (half bridge), or 6-transistor (full bridge), and there are also three-level 12 transistors packaged as one module. Due to being encapsulated as a module and electrically insulated, the installation process is simple; IGCT does not have this advantage, making the design, installation, and maintenance of the system complex. The contradiction between insulation and heat dissipation leads to more system problems.
IGBT low-power drives can be made together, while high-power drives require separate drive boards. DSP is the control core, as well as external IO, internal signal acquisition, processing, driver signal buffering, driver signal isolation, amplification, in order to reach the GE pole of IGBT. Fiber optic isolation transmission drive signal.
The on/off frequency of IGBT should be high, but dv/dt means the on/off speed should be low, which has a certain contradiction. Only when the speed is fast enough can the frequency be high enough. Adding an absorption circuit or IGBT adopts soft shutdown. The absorption circuit absorbs the potential 10kv/us that may be generated. Soft shutdown refers to reducing the closing speed of the switch, causing manual shutdown delay. The advantage is to reduce dv/dt, while the disadvantage is to increase IGBT loss, so the shutdown time needs to be carefully adjusted. When the IGBT driver circuit turns off the IGBT, a negative voltage is applied at the GE (positive voltage is applied when turned on), and a micro resistor is connected at the micro capacitor. This slows down the voltage drop of the GE and reduces dv/dt.

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