5SHY35L4503 ABB 可控硅整流器

Description

可控硅整流器：是一种以晶闸管（电力电子功率器件）为基础，以智能数字控制电路为核心的电源功率控制电器。具有效率高、无机械噪声和磨损、响应速度快、体积小、重量轻等诸多优点。

通常用双三极管来描述可控硅的四层结构，看成一NPN和PNP晶体管的互联. 若两晶体管的共基极电流放大系数分别为α₁和α₂(均为工作状态的函数)，导通的必要条件是α₁+α₂≃₁.阻断状态下， 两晶体管的电流放大系数均很小;若在正向阻断状态下，于控制极注入一正向电流，则NPN管的电流放大系数α₁迅速增大，并导致α₂的增大，从而满足导通条件
可控硅是一种极为重要的功率电子器件，可以以极小的控制功率控制兆瓦级的电力，常用于整流、开关、变频、逆变等电路中. 高功率可控硅采用甚大面积的硅片，需封装在带散热器的管壳中.

5SHY35L4503 3BHB004693R0001 3BHB004692R0002 5SXE01-0127

Thyristor rectifier: It is a power control appliance based on thyristors (power electronic power devices) and centered on intelligent digital control circuits. It has many advantages such as high efficiency, no mechanical noise and wear, fast response speed, small size, and light weight.
Usually, a dual transistor is used to describe the four layer structure of a thyristor, as an interconnection between an NPN and PNP transistor If the common base current amplification coefficients of two transistors are α 1 and α 2 (all functions of working state), the necessary condition for conduction is α 1+ α 2 ≃ 1. In the blocking state, the current amplification coefficient of both transistors is very small; If a forward current is injected into the control electrode in a forward blocking state, the current amplification coefficient of the NPN transistor α 1 rapidly increases and causes α Increase by 2 to meet the conduction condition
Thyristor is an extremely important power electronic device that can control megawatt level power with minimal control power. It is commonly used in circuits such as rectification, switching, frequency conversion, and inverter High power thyristor uses a large area of silicon wafers and needs to be packaged in a shell with a heat sink

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