5SHY35L4510 ABB 可控硅电子元器件 (复制)

新能源发电和输配电领域大容量、高可靠的需求,提出了自主化IGCT器件(集成门极换流晶闸管)的设计、制备和驱动控制方案,可以提高阻断电压和关断电流能力、降低器件运行损耗,且可以结合应用工况开展定制优化,如改善器件防爆特性、解决高压装置中的驱动供电问题等,从而实现大容量、高可靠、低成本、高效率的能量管理和功率变换。

目前团队已研制出4.5kV/5kA和6.5kV/4kA的IGCT器件,功率等级全面覆盖IGBT,且具有向更大容量发展的潜力。与IGBT、MOSFET等晶体管器件相比,本技术提出的IGCT具有通态损耗低、耐受电压高、可靠性高、抗干扰能力强等突出优势,符合能源发展趋势,且制造工艺沿用基本沿用传统的晶闸管路线,制造成本低,国内工艺基础好。

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  • 购买咨询热线/Phone:18859254943
  • 邮箱/Email:sales@ygdcs.com
  • 地址:成都高新区天益街北巷52号附14号2层

描述

功率半导体是支撑能源领域发展的核心部件。为实现3060双碳目标,我国正在超常规推动新能源发电、大容量输配电和电气化交通等领域,对电压等级4.5kV以上的功率器件需求急速增长。提高器件电压和容量可以减少器件串并联数量、缩减装备体积和成本,是解决城市用地紧张、降低海上风电平台建设成本的关键。然而,受工作机理和制备工艺限制,IGBT器件最大功率等级为4.5kV/3kA和6.5kV/0.75kA,已接近瓶颈,无法满足能源发展需求。因此,亟需更高电压、更大容量、更高可靠性和更低制造成本的功率半导体器件解决方案。2020年,中国功率半导体市场规模达2000亿元,但90%以上依赖进口,尤其是4.5kV以上器件,近乎全部进口。亟需寻求自主可控的功率半导体器件国产替代方案。

5SHY35L4510

Power semiconductors are the core components that support the development of the energy field. In order to achieve the 3060 dual carbon target, China is unconventional in promoting new energy generation, high-capacity transmission and distribution, and electrified transportation, with a rapid increase in demand for power devices with voltage levels above 4.5kV. Improving device voltage and capacity can reduce the number of devices in series and parallel, reduce equipment volume and cost, and is the key to solving the shortage of urban land and reducing the construction cost of offshore wind power platforms. However, due to the limitations of working mechanism and preparation process, the maximum power levels of IGBT devices are 4.5kV/3kA and 6.5kV/0.75kA, which are close to the bottleneck and cannot meet the energy development needs. Therefore, there is an urgent need for power semiconductor device solutions with higher voltage, larger capacity, higher reliability, and lower manufacturing costs. In 2020, the scale of China’s power semiconductor market reached 200 billion yuan, but over 90% relied on imports, especially for devices above 4.5kV, almost all of which were imported. There is an urgent need to seek domestically produced alternative solutions for independently controllable power semiconductor devices.

ABB IGCT模块5SHY4045L0004/5SHY6545L0001 AC10272001R0101 5SXE10-0181、5SHY35L4520、5SHY5045L0020、ABB IGCT模块5SHY4045L0004/5SHY6545L0001 AC10272001R0101 5SXE10-0181、5SHY35L4520、5SHY5045L0020ABB IGCT模块5SHY4045L0004/5SHY6545L0001 AC10272001R0101 5SXE10-0181

5SHY35L4520、5SHY5045L0020ABB IGCT模块5SHY4045L0004/5SHY6545L0001 AC10272001R0101 5SXE10-0181、pm511v16、5SHY35L4520、5SHY5045L0020ABB IGCT模块5SHY4045L0004/5SHY6545L0001 AC10272001R0101 5SXE10-0181、5SHY35L4520、5SHY5045L0020 ABB IGCT模块5SHY4045L0004/5SHY6545L0001 AC10272001R0101 5SXE10-0181,5SHY35L4520、5SHY5045L0020ABB IGCT模块5SHY4045L0004/5SHY6545L0001 AC10272001R0101 5SXE10-0181、5SHY35L4520、5SHY5045L0020ABB IGCT模块5SHY4045L0004/5SHY6545L0001 AC10272001R0101 5SXE10-0181、5SHY35L4520、5SHY5045L0020

  • 购买咨询热线/Phone:18859254943
  • 邮箱/Email:sales@ygdcs.com
  • 地址:成都高新区天益街北巷52号附14号2层