5SHY35L4520 ABB 非对称晶闸管IGCT

Description

IGCT关断暂态过程较为复杂,涉及门极驱动关断电路完成电流换向及反并联二极管续流回路导通等情况。驱动电路通过端子G逐步抽出N基区过剩载流子的同时,IGCT端电压随之发生变化,进而导致反并联二极管运行状态的改变。该部分结合上述状态变化,详细阐述IGCT关断暂态驱动电路及续流回路运行特性。

根据IGCT关断电流下降过程,可将关断暂态分为3个阶段：1）存储阶段：驱动电流通过门极端子从P基区抽出过剩载流子,使内建PNP与NPN退出饱和状态;2）下降阶段：N基区承压逐渐增大并趋于稳定,区域内几乎全部过剩载流子被扫除;3）拖尾阶段：N基区残存过剩载流子通过复合作用被消除的过程。IGCT关断暂态及断态时,门极驱动关断电路运行状态如图3所示,其中：V_GU为关断暂态驱动电源;L_n为门极驱动关断电路集成电感;S为关断电路开关。由图3可知,关断暂态时S闭合,驱动关断电路进入工作状态,反向V_GU施加于内建NPN发射结两端,使发射结反向阻断

5SHY35L4520 5SXE10-0181 AC10272001R0101

The transient process of IGCT shutdown is relatively complex, involving gate driven shutdown circuits to complete current commutation and reverse parallel diode freewheeling circuit conduction. As the driving circuit gradually extracts excess carriers from the N base region through terminal G, the voltage at the IGCT terminal changes, resulting in a change in the operating state of the anti parallel diode. This section provides a detailed explanation of the IGCT shutdown transient driving circuit and the operating characteristics of the freewheeling circuit based on the above state changes.
According to the process of IGCT shutdown current decrease, the shutdown transient can be divided into three stages: 1) storage stage: the driving current extracts excess carriers from the P-base region through the gate terminal, causing the built-in PNP and NPN to exit the saturation state; 2) Descending stage: The pressure in the N-base region gradually increases and tends to stabilize, and almost all excess carriers in the region are swept away; 3) Trailing stage: The process of residual excess carriers in the N base region being eliminated through recombination. During the IGCT shutdown transient and shutdown state, the operating status of the gate drive shutdown circuit is shown in Figure 3, where VGU represents the shutdown transient driving power supply; Ln is the integrated inductor of the gate driven shutdown circuit; S is the shut-off circuit switch. From Figure 3, it can be seen that during the transient shutdown, S is closed, driving the shutdown circuit to enter the working state. Reverse VGU is applied to both ends of the built-in NPN transmission junction, causing the transmission junction to be blocked in the opposite direction

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