5SHY4045L0001 3BHB018162R0001 ABB 集成门极换流晶闸管IGCT

描述

集成门极换流晶闸管IGCT (Integrated Gate-Commutated Thyristor)有的厂家也称为GCT (Gate-Commutated Thyristor)， 即门极换流晶闸管,是20世纪90年代后期出现的新型电力电子器件。集成门极换流晶闸管IGCT将IGBT与GTO的优点结合起来，其容量与GTO相当,但开关速度比GTO快10倍,而且可以省去GTO应用是庞大而复杂的缓冲电路，不过其所需的驱动功率仍然很大。目前，IGCT正在与IGBT以及其他新型器件激烈竞争,试图最终取代GTO在大功率场合的位置。

集成栅极换流晶闸管IGCT(Intergrated Gate Commutated Thyristors)是1996年问世的用于巨型电力电子成套装置中的新型电力半导体器件。IGCT是一 种基于GTO结构、利用集成栅极结构进行栅极硬驱动、采用缓冲层结构及阳极透明发射极技术的新型大功半导体开关器件，具有晶闸管的通态特性及晶体管的开关特性。5SHY4045L0001 3BHB018162R0001由于采用了缓冲结构以及浅层发射极技术，因而使动态损耗降低了约50%，另外，此类器件还在一个芯片上集成了具有良好动态特性的续流二极管，从而以其独特的方式实现了晶闸管的低通态压降、高阻断电压和晶体管稳定的开关特性有机结合.

5SHY4045L0001 3BHB018162R0001 3BHE009681R0101 GVC750BE101

Integrated Gate Commutated Thyristor (IGCT), also known as GCT (Gate Commutated Thyristor) by some manufacturers, is a new type of power electronic device that emerged in the late 1990s. The integrated gate commutated thyristor IGCT combines the advantages of IGBT and GTO, with a capacity comparable to GTO, but a switching speed 10 times faster than GTO, and can eliminate the need for large and complex buffer circuits in GTO applications. However, its required driving power is still very high. At present, IGCT is fiercely competing with IGBT and other new devices, attempting to ultimately replace GTO in high-power applications.
Integrated Gate Commutated Thyristors (IGCT) is a new type of power semiconductor device developed in 1996 for use in giant power electronic assemblies. IGCT is a new high-power semiconductor switching device based on GTO structure, utilizing integrated gate structure for gate hard drive, using buffer layer structure and anode transparent emitter technology. It has the on state characteristics of thyristors and the switching characteristics of transistors. 5SHY4045L0001 3BHB018162R0001 uses a buffer structure and shallow emitter technology, which reduces dynamic losses by about 50%. In addition, this type of device integrates a continuous current diode with good dynamic characteristics on one chip, achieving a unique combination of low pass state voltage drop, high blocking voltage, and transistor stable switching characteristics of the thyristor

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