5SHY5045L0020 ABB 可控硅模块

Description

本文研究了非对称型门极换向晶闸管（ASGCT）器件的结构特点与设计、工艺设计以及改善器件性能的关键工艺技术，主要内容如下：⒈　提出了ASGCT器件的优化设计方法，为器件最终正确地实现奠定了基础。由于至今ASGCT器件工程设计尚未见系统的定量理论报道，本文以600A/3000V非对称型门极换流晶闸管为例，定量研究优化设计ASGCT时工艺参数和结构参数之间所应该满足的必要条件和设计原则。⒉　半绝缘多晶硅（SIPOS）可作为钝化材料来改善高压平面器件的性能，通常采用低压化学气相淀积（LPCVD）方法生长SIPOS钝化膜。但将其应用于台面功率器件却带来工艺上的不便。本文采用直流辉光放电法在台面功率半导体器件上生长SIPOS钝化膜。研究结果表明，SIPOS钝化的功率器件性能要好于聚酰亚胺钝化的功率器件，可以有效地提高功率器件的可靠性。基于此提出了SIPOS/PI复合钝化结构来改善台面功率半导体器件的表面特性。

5SHY35L4512

This article studies the structural characteristics and design, process design, and key process technologies for improving device performance of asymmetric gate commutated thyristor (ASGCT) devices. The main content is as follows: 1. An optimization design method for ASGCT devices is proposed, laying the foundation for the final and correct implementation of the devices. Due to the lack of systematic quantitative theoretical reports on the engineering design of ASGCT devices, this article takes 600A/3000V asymmetric gate commutated thyristors as an example to quantitatively study the necessary conditions and design principles that should be met between process and structural parameters when optimizing the design of ASGCT Semi insulating polycrystalline silicon (SIPOS) can be used as a passivation material to improve the performance of high-voltage planar devices. Low voltage chemical vapor deposition (LPCVD) is commonly used to grow SIPOS passivation films. But applying it to tabletop power devices brings technological inconvenience. This article uses direct current glow discharge method to grow SIPOS passivation film on mesa power semiconductor devices. The research results indicate that the performance of power devices passivated by SIPOS is better than that of power devices passivated by polyimide, which can effectively improve the reliability of power devices. Based on this, a SIPOS/PI composite passivation structure is proposed to improve the surface characteristics of mesa power semiconductor devices.

ABB IGCT模块5SHY4045L0004/5SHY6545L0001 AC10272001R0101 5SXE10-0181、5SHY35L4520、5SHY5045L0020、ABB IGCT模块5SHY4045L0004/5SHY6545L0001 AC10272001R0101 5SXE10-0181、5SHY35L4520、5SHY5045L0020ABB IGCT模块5SHY4045L0004/5SHY6545L0001 AC10272001R0101 5SXE10-0181

5SHY35L4520、5SHY5045L0020ABB IGCT模块5SHY4045L0004/5SHY6545L0001 AC10272001R0101 5SXE10-0181、pm511v16、5SHY35L4520、5SHY5045L0020ABB IGCT模块5SHY4045L0004/5SHY6545L0001 AC10272001R0101 5SXE10-0181、5SHY35L4520、5SHY5045L0020 ABB IGCT模块5SHY4045L0004/5SHY6545L0001 AC10272001R0101 5SXE10-0181，5SHY35L4520、5SHY5045L0020ABB IGCT模块5SHY4045L0004/5SHY6545L0001 AC10272001R0101 5SXE10-0181、5SHY35L4520、5SHY5045L0020ABB IGCT模块5SHY4045L0004/5SHY6545L0001 AC10272001R0101 5SXE10-0181、5SHY35L4520、5SHY5045L0020