UAD149A0011 采用缓冲层结构及阳极透明发射极技术的新型大功率半导体开关器件

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UAD149A0011 采用缓冲层结构及阳极透明发射极技术的新型大功率半导体开关器件

集成门极换流晶闸管（简称IGCT或GCT）是1996年问世的用于巨型电力电子成套装置中的新型电力半导体器件。IGCT是一种基于GTO结构、利用集成栅极结构进行栅极硬驱动、采用缓冲层结构及阳极透明发射极技术的新型大功率半导体开关器件，具有晶闸管的通态特性及晶体管的开关特性。

IGCT采用缓冲结构以及浅层发射极技术，使动态损耗降低约50％，UAD149A0011具有电流大、电压高、开关频率高、可靠性高、结构紧凑、损耗低等特点。

集成门极换流晶闸管是一种大功率半导体器件，UAD149A0011将门极驱动电路和门极换流晶闸管集成在一起。与传统的门极换流晶闸管相比，集成门极换流晶闸管具有更低的关断时间和功耗，同时不需要吸收电路。其工作原理如下：

当集成门极换流晶闸管的阳极A接电源的正端、阴极K经负载接电源的负端时，承受正向电压，此时控制电路中的开关S断开，晶闸管不导通。当控制电路中的开关S闭合，使控制极也加上正向电压时，晶闸管开始导通。

一旦晶闸管导通后，UAD149A0011控制极就失去控制作用。即使去掉控制极上的电压（即将开关S断开），晶闸管仍然保持导通状态。但如果控制极上加的是反向电压，不论主电路中阳极和阴极间是正向电压还是反向电压，晶闸管都不导通。

集成门极换流晶闸管具有开通损耗和导通损耗都很低、可以在高频率下运行等优点，广泛应用于高电压大电流的场合。

UAD149A0011 采用缓冲层结构及阳极透明发射极技术的新型大功率半导体开关器件

Integrated gate commutated thyristor (IGCT or GCT for short) is a new type of power semiconductor device which was developed in 1996 and used in large power electronics packages. IGCT is a new type of high-power semiconductor switching device based on GTO structure, using integrated gate structure to drive the gate hard, using buffer layer structure and transparent anode emitter technology, which has the on-state characteristics of thyristor and the switching characteristics of transistor.

IGCT adopts buffer structure and shallow emitter technology to reduce the dynamic loss by about 50%. UAD149A0011 has the characteristics of large current, high voltage, high switching frequency, high reliability, compact structure and low loss.

Integrated gate commutated thyristor is a kind of high-power semiconductor device. UAD149A0011 integrates gate drive circuit and gate commutated thyristor. Compared with traditional gate commutated thyristors, integrated gate commutated thyristors have lower turn-off time and power consumption, and do not require absorbing circuits. It works as follows:

When the anode A of the integrated gate converter thyristor is connected to the positive end of the power supply, and the cathode K is connected to the negative end of the power supply through the load, the positive voltage is borne, and the switch S in the control circuit is disconnected, and the thyristor is not enabled. When the switch S in the control circuit is closed so that the control pole also has a forward voltage, the thyristor starts to conduct.

Once the thyristor is on, the UAD149A0011 control pole loses control. Even if the voltage on the control pole is removed (that is, the switch S is disconnected), the thyristor remains on. However, if the control pole is added to the reverse voltage, regardless of whether the anode and cathode in the main circuit is a forward voltage or reverse voltage, the thyristor will not be switched on.

The integrated gate commutated thyristor has the advantages of low on-on loss and on-on loss, and can operate at high frequency. It is widely used in high voltage and high current situations.