XVME-113 RAM/ROM/Flash存储器模块

Description

XVME-113 RAM/ROM/Flash存储器模块

特点:
二十四个32针内存插座
完整的32位VMEbus从机接口
两个独立的可配置存储体
电池备用
XVME-113 RAM/ROM/Flash存储器模块是双高、VMEbus兼容板。 它可以容纳高达12 MB的内存，24 MB的EPROM, 12 MB的EEPROM或12MB的闪存。
XVME-113有24个32针JEDEC插座，逻辑上分为两个组。存储体1包含16个存储位置，存储体2包含8个存储位置。每个存储体被设计成采用相同类型和速度的存储设备。每个存储体也可以根据以下内容独立配置(通过跳线和开关):VMEbus地址(在标准或扩展地址空间内)、地址修饰符或存储设备速度和类型。
XVME-113设计有一一个板载电池备用电路， 以便在电源故障时为CMOS RAM设备供电。该模块还提供掉电存储器保护电路，当电压低于4.65伏时,该电路防止数据被写入存储器。XVME-1 13还包含-一个电池供电的实时时钟和配置寄存器，以便读取存储器类型和大小。

XVME-113 RAM/ROM/Flash存储器模块

Features:
Twenty-four 32-pin memory sockets
Full 32-bit VMEbus slave interface
Two independent, configurable storage bodies
Battery backup
The XVME-113 RAM/ROM/Flash memory module is a dual-height, VMEbus compatible board. It can hold up to 12 MB of memory, 24 MB of EPROM, 12 MB of EEPROM or 12
MB of flash memory.
The XVME-113 has 24 32-pin JEDEC sockets logically divided into two groups. Storage body 1 contains 16 storage locations, and storage body 2 contains 8 storage locations. Each storage body is designed to take the same class
Type and speed of storage devices. Each storage body can also be configured independently (via jumpers and switches) based on :VMEbus addresses (within standard or extended address Spaces), address modifiers, or storage devices
Speed and type.
The XVME-113 is designed with an onboard battery backup circuit to power CMOS RAM devices in the event of a power failure. The module also provides a power down memory protection circuit, when the voltage is below 4.65 volts,
The circuit prevents data from being written to the memory. XVME-1 13 also contains – a battery-operated real time clock and configuration register for reading memory type and size.